參數(shù)資料
型號(hào)： RFP12P10
廠(chǎng)商： INTERSIL CORP
元件分類(lèi)： JFETs
英文描述： 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 和 100V, 0.300 Ω, P溝道增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管)
中文描述： 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 37K
代理商： RFP12P10
4-162
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP12P08
-80
-80
RFP12P10
-100
-100
UNITS
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20K
)
(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
12
30
±
20
75
0.6
12
30
±
20
75
0.6
A
A
V
W
W/
o
C
o
C
-55 to 150
-55 to 150
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFP12P08
BV
DSS
I
D
= 250
μ
A, V
GS
= 0
-80
-
-
V
RFP12P10
-100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
1
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
C
= 125
o
C
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0
-
-
±
100
nA
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 12A, V
GS
= -10V
-
-
-3.6
V
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 12A, V
GS
= -10V, (Figures 6, 7)
I
D
≈
12A, V
DD
= 50V,
R
G
= 50
, R
L
= 4.1
, V
GS
= -10V
(Figure 10)
-
-
0.300
Turn-On Delay Time
t
d(ON)
-
18
60
ns
Rise Time
t
r
-
90
175
ns
Turn-Off Delay Time
t
d(OFF)
-
144
275
ns
Fall Time
t
f
-
94
175
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= -25V, f = 1MHz
(Figure 9)
-
-
1500
pF
Output Capacitance
C
OSS
-
-
700
pF
Reverse Transfer Capacitance
C
RSS
-
-
300
pF
Thermal Resistance, Junction to Case
R
θ
JC
RFP12P08, RFP12P10
-
-
1.67
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -12A
-
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= -12A, dI
SD
/dt = 100A/
μ
s
-
200
-
ns
NOTES:
2. Pulse Test: Pulse Width =
≤
300
μ
s Max, Duty Cycle
≤
2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP12P08, RFP12P10
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