參數(shù)資料
型號(hào): RFP12P10
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 和 100V, 0.300 Ω, P溝道增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管)
中文描述: 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 37K
代理商: RFP12P10
4-161
File Number
1495.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999.
RFP12P08, RFP12P10
12A, 80V and 100V 0.300 Ohm, P-Channel
Power MOSFETs
The RFP12P08, and RFP12P10 are P-Channel
enhancement mode silicon gate power field effect transistors
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Formerly developmental type TA17511.
Features
12A, 80V and 100V
r
DS(ON)
= 0.300
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP12P08
TO-220AB
RFP12P08
RFP12P10
TO-220AB
RFP12P10
NOTE: When ordering, include the entire part number.
G
D
S
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Data Sheet
June 1999
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