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參數(shù)資料
| 型號(hào)： | RFP10N15 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 10 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | RFP10N15 |
4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Applications Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
(Continued)
1.5
1.0
0.5
-50
0
50
100
150
T
J,
JUNCTION TEMPERATURE (
o
C)
N
2.0
O
0
V
GS
= 10V
I
D
= 5A
PULSE DURATION = 80
μ
s
1.2
1.0
-50
0
50
100
T
J,
JUNCTION TEMPERATURE (
o
C)
N
T
1.4
0.9
0.8
0.7
1.1
1.3
150
V
DS
= V
GS
I
D
= 250
μ
A
0
10
20
30
40
50
C
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
800
600
400
200
0
1000
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
0.75BV
DSS
0.75BV
DSS
0.50BV
DSS
0.50BV
DSS
0.25BV
DSS
0.25BV
DSS
GATE
SOURCE
VOLTAGE
R
L
= 15
I
G(REF)
= 1mA
V
GS
= 10V
V
DD
= BV
DSS
V
DD
= BV
DSS
I
G(REF)
I
G(ACT)
20
80
DRAIN SOURCE
VOLTAGE
I
G(REF)
I
G(ACT)
V
D
,
t, TIME (
μ
s)
V
G
,
150
112.5
75
37.5
0
10
8
6
4
0
2
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP10N15
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