參數(shù)資料
型號： RFD10P03L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應管)
中文描述： 10 A, 30 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 1/8頁
文件大?。?/td> 133K
代理商： RFD10P03L
7-3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD10P03L, RFD10P03LSM, RFP10P03L
10A, 30V 0.200 Ohm, Logic Level,
P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49205.
Features
10A, 30V
r
DS(ON)
= 0.200
Temperature Compensating PSPICE
Model
PSPICE Thermal Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD10P03L
TO-251AA
10P03L
RFD10P03LSM
TO-252AA
10P03L
RFP10P03L
TO-220AB
F10P03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the
TO-252AA
variant in tape and reel, i.e.
RFD10P03LSM
9A..
G
D
S
JEDEC TO-251AA
JEDEC TO-252AA
JEDEC TO-220AB
SOURCE
DRAIN
DRAIN (FLANGE)
GATE
GATE
SOURCE
DRAIN (FLANGE)
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
Data Sheet
July 1999
File Number
3515.2
相關PDF資料
PDF描述
RFD10P03LSM 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應管)
RFP10P15 P-Channel Power MOSFET(P溝道增強模式功率MOS場效應管)
RFP12N08 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
RFP12N10 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
RFP12N18 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs
相關代理商/技術參數(shù)
參數(shù)描述
RFD10P03LSM 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD10P03LSM9A 制造商:HARRIS 制造商全稱:HARRIS 功能描述:10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET
RFD12N06RLE 功能描述:MOSFET 60V/12a/0.135Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD12N06RLE 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC I-PAK
RFD12N06RLESM 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:49W ;RoHS Compliant: Yes
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*