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參數(shù)資料
| 型號： | RFD10P03L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應管) |
| 中文描述： | 10 A, 30 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 133K |
| 代理商： | RFD10P03L |
7-8
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
FIGURE 20. GATE CHARGE TEST CIRCUIT
FIGURE 21. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
V
GS
R
L
R
G
DUT
+
-
V
DD
t
d(ON)
t
r
90%
10%
V
DS
90%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
t
ON
10%
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
G(REF)
V
DD
Q
g(TH)
V
GS
= -1V
Q
g(-5)
V
GS
= -5V
Q
g(TOT)
V
GS
= -10V
V
DS
-V
GS
I
g(REF)
0
0
RFD10P03L, RFD10P03LSM, RFP10P03L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD10P03LSM | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應管) |
| RFP10P15 | P-Channel Power MOSFET(P溝道增強模式功率MOS場效應管) |
| RFP12N08 | 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs |
| RFP12N10 | 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs |
| RFP12N18 | 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD10P03LSM | 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD10P03LSM9A | 制造商:HARRIS 制造商全稱:HARRIS 功能描述:10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET |
| RFD12N06RLE | 功能描述:MOSFET 60V/12a/0.135Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD12N06RLE | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC I-PAK |
| RFD12N06RLESM | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:49W ;RoHS Compliant: Yes |
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