參數(shù)資料
型號： RFD10P03L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應(yīng)管)
中文描述： 10 A, 30 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 133K
代理商： RFD10P03L
7-4
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specifie
RFD10P03L, RFD10P03LSM,
RFP10P03L
-30
-30
±
10
UNITS
V
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20K
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
(0.063in (1.6mm) from case for 10s)
10
See Figure 5
Refer to UIS Curve
65
0.43
-55 to 175
300
A
W
W/
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 12)
V
DS
= -30V,
V
GS
= 0V
V
GS
=
±
10V
I
D
= 10A, V
GS
= -5V (Figures 9, 10)
I
D
= 10A, V
GS
= -4.5V (Figures 9, 10)
V
DD
= 15V, I
D
10A, R
L
= 1.5
,
R
GS
= 5
,
V
GS
= -5V
(Figure 13)
-30
-
-
V
Gate Threshold Voltage
-1
-
-2
V
Zero Gate Voltage Drain Current
T
C
= 25
o
C
T
C
= 150
o
C
-
-
-1
μ
A
-
-
-50
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
-
-
±
100
nA
Drain to Source On Resistance
(Note 1)
-
-
0.200
0.220
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-5)
Q
g(TH)
-
-
100
ns
Turn-On Delay Time
-
15
-
ns
Rise Time
-
50
-
ns
Turn-Off Delay Time
-
35
-
ns
Fall Time
-
20
-
ns
Turn-Off Time
-
-
80
ns
Total Gate Charge
V
GS
= 0 to -10V
V
GS
= 0 to -5V
V
GS
= 0 to -1V
V
DD
= -24V, I
D
10A,
R
L
= 2.4
I
g(REF)
= -0.25mA
(Figure 14)
-
25
30
nC
Gate Charge at -5V
-
13
16
nC
Threshold Gate Charge
-
1.2
1.5
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= -25V, V
GS
= 0V, f = 1MHz
(Figure 15)
-
1035
-
pF
Output Capacitance
-
340
-
pF
Reverse Transfer Capacitance
-
35
-
pF
Thermal Resistance, Junction to Case
-
-
2.30
o
C/W
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
RFD10P03L, RFD10P03LSM
-
-
100
RFP10P03L
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Forward Voltage
V
SD
I
SD
= -10A
-
-
-1.5
V
Reverse Recovery Time
t
rr
I
SD
= -10A, dI
SD
/dt = -100A/
μ
s
-
-
75
ns
NOTE:
2. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%.
RFD10P03L, RFD10P03LSM, RFP10P03L
相關(guān)PDF資料
PDF描述
RFD10P03LSM 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場效應(yīng)管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD10P03LSM 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD10P03LSM9A 制造商:HARRIS 制造商全稱:HARRIS 功能描述:10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET
RFD12N06RLE 功能描述:MOSFET 60V/12a/0.135Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD12N06RLE 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC I-PAK
RFD12N06RLESM 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:49W ;RoHS Compliant: Yes
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