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參數(shù)資料
| 型號(hào)： | RFP10N15 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 10 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | RFP10N15 |
3
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
0
50
100
150
0
T
C
, CASE TEMPERATURE (
o
C)
P
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
12
10
8
6
4
2
0
100
10
1
0.11
10
100
1000
I
D
,
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
C
= 25
o
C
DC
I
D
MAX CONTINUOUS
15
10
5
0
2
3
4
5
I
D
D
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
1
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
T
C
= 25
C
V
GS
= 10V
V
GS
= 20V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
6
7
8
9
20
0
V
DS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
I
D
D
15
10
5
0
2
4
6
8
10
V
GS,
GATE TO SOURCE VOLTAGE (V)
0
20
25
o
C
-40
o
C
125
o
C
-40
o
C
125
o
C
125
o
C
25
o
C
-40
o
C
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE
≤
2%
r
D
D
I
D,
DRAIN CURRENT (A)
0.7
0.6
0.4
0.2
0
0
2
8
12
16
R
) 0.5
0.3
0.1
4
6
10
14
RFP10N15
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參數(shù)描述 |
|---|---|
| RFP10N15101 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| RFP10N15P2 | 制造商:Harris Corporation 功能描述: |
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