參數(shù)資料
型號： RD28F1602C3T90
廠商： INTEL CORP
元件分類： 存儲器
英文描述： 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA66
封裝： 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù)： 7/70頁
文件大?。?/td> 1223K
代理商： RD28F1602C3T90
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
Datasheet
7
1.0
Introduction
Thisdocumentcontainsthespecificationsforthe3 VoltIntel
Advanced+BootBlockFlash
Memory(C3)Stacked-ChipScalePackage(Stacked-CSP)device.Stackedmemorysolutionsare
offeredinthefollowingcombinations:32-Mbitflash+8-MbitSRAM,32-Mbitflash+4-Mbit
SRAM,16-Mbitflash+4-MbitSRAM,or16-Mbitflashmemory+2-MbitSRAM.
1.1
DocumentConventions
Throughoutthisdocument,thefollowingconventionshavebeenadopted.
Voltages:
“2.7V”referstothefullvoltagerange,2.7V–3.3V;12Vrefersto11.4Vto12.6V
Mainblock(s)
:32-Kwordblock
Parameterblock(s)
:4-Kwordblock
1.2
ProductOverview
TheC3Stacked-CSPdevicecombinesflashandSRAMintoasinglepackage,andprovidessecure
low-voltagememorysolutionsforportableapplications.Thismemoryfamilycombinestwo
memorytechnologies,flashmemoryandSRAM,inonepackage.Theflashmemorydelivers
enhancedsecurityfeatures,ablocklockingcapabilitythatallowsinstantlocking/unlockingofany
flashblockwithzero-latency,anda128-bitprotectionregisterthatenableuniquedevice
identification,tomeettheneedsofnextgenerationportableapplications.Improved12 V
productionprogrammingcanbeusedtoimprovefactorythroughput.
Theflashmemoryisasymmetrically-blockedtoenablesystemintegrationofcodeanddatastorage
inasingledevice.Eachflashblockcanbeerasedindependentlyoftheothersupto100,000times.
Theflashhaseight8-KBparameterblockslocatedateitherthetop(denotedby-Tsuffix)orthe
bottom(-Bsuffix)oftheaddressmapinordertoaccommodatedifferentmicroprocessorprotocols
forkernelcodelocation.Theremainingflashmemoryisgroupedinto32-Kwordmainblocks.Any
individualflashblockcanbelockedorunlockedinstantlytoprovidecompleteprotectionforcode
ordata(see
Section5.7,“FlashEraseandProgramTimings(1)”onpage 31
fordetails).
TheflashcontainsbothaCommandUserInterface(CUI)andaWriteStateMachine(WSM).The
CUIservesastheinterfacebetweenthemicrocontrollerandtheinternaloperationoftheflash
memory.TheinternalWSMautomaticallyexecutesthealgorithmsandtimingsnecessaryfor
Table1. BlockOrganization(x16)
MemoryDevice
Kwords
32-MbitFlash
2048
16-MbitFlash
1024
2-MbitSRAM
128
4-MbitSRAM
256
8-MbitSRAM
512
NOTE:
Allwordsare16bitseach.
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相關代理商/技術參數(shù)
參數(shù)描述
RD28F1602C3TD70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F1604C3B110 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F1604C3B90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F1604C3BD70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F1604C3BD70A 功能描述:IC FLASH 16MBIT 70NS 66EBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤
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