參數(shù)資料
型號(hào)： RD28F1602C3T90
廠商： INTEL CORP
元件分類(lèi)： 存儲(chǔ)器
英文描述： 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA66
封裝： 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁(yè)數(shù)： 45/70頁(yè)
文件大小： 1223K
代理商： RD28F1602C3T90
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
Datasheet
45
7.4.1
SRAMOperationduringFlash“Busy”
ThisfunctionalityprovidestheabilitytouseboththeflashandtheSRAM“atthesametime”
withinasystem,similartotheoperationoftwodeviceswithseparatefootprints.Thisoperationcan
beachievedbyfollowingtheappropriatetimingconstraintswithinasystem.
7.4.2
SimultaneousBusOperations
OperationsthatrequireboththeSRAMandFlashtobeinactivemodearedisallowed.Anexample
ofthesecaseswouldincludesimultaneousreadsonboththeflashandSRAM,whichwouldresult
incontentionforthedatabus.Finally,areadofonedevicewhileattemptingtowritetotheother
(similartotheconditionsofdirectmemoryaccess(DMA)operation)arealsonotwithinthe
recommendedoperatingconditions.Basically,onlyonememorycandrivetheoutputsoutthe
deviceatonegivenpointintime.
7.5
PrintedCircuitBoardNotes
TheIntelStacked-CSPwillsavesignificantspaceonyourPCBbycombiningtwochipsintoone
BGAstylepackage.IntelStacked-CSPhasa0.8mmpitchthatcanberoutedonyourPrinted
CircuitBoardwithconventionaldesignrules.Tracewidthsof0.127mm(0.005inches)aretypical.
Unusedballsinthecenterofthepackagearenotpopulatedtofurtherincreasetheroutingoptions.
StandardsurfacemountprocessandequipmentcanbeusedfortheIntelStacked-CSP.
NOTE:
TopView
7.6
SystemDesignNotesSummary
TheAdvanced+BootBlockStacked-CSPallowshigherlevelsofmemorycomponentintegration.
Differentpowersupplyconfigurationscanbeusedwithinthesystemtoachievedifferent
objectives.Atleastthreedifferent0.1μfcapacitorsshouldbeusedtodecouplethedeviceswithina
system.SRAMreadsorwritesduringaflashprogramorerasearesupportedoperations.Standard
printedcircuitboardtechnologycanbeused.
Figure14.StandardPCBDesignRulesCanbeUsedwithStacked-CSPDevice
LandPadDiameter:0.35mm(0.0138in)
SolderMaskOpening:0.50mm(0.0198in)
TraceWidth:0.127mm(0.005in)
TraceSpaces:0.160mm(0.00625in)
ViaCapturePad:0.51mm(0.020in)
ViaDrillSize:0.25mm(0.010in)
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RD28F1602C3TD70 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F1604C3B110 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F1604C3B90 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F1604C3BD70 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F1604C3BD70A 功能描述:IC FLASH 16MBIT 70NS 66EBGA RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán)
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