參數(shù)資料
型號： PSD834F2V
廠商： 意法半導體
英文描述： Flash PSD, 3.3V Supply, for 8-bit MCUs 2 Mbit 256 Kbit Dual Flash Memories and 64 Kbit SRAM
中文描述： 閃光私營部門，3.3V電源，為8位微控制器2兆256千位雙閃存和64千位的SRAM
文件頁數(shù)： 20/89頁
文件大?。?/td> 615K
代理商： PSD834F2V
PSD834F2V
20/89
Figure 5. Data Toggle Flowchart
The Error Flag (DQ5) bit is set if either an internal
time-out occurred while the embedded algorithm
attempted to program the byte, or if the MCU at-
tempted to program a 1 to a bit that was not erased
(not erased is logic 0).
It is suggested (as with all Flash memories) to read
the location again after the embedded program-
ming algorithm has completed, to compare the
byte that was written to Flash memory with the
byte that was intended to be written.
When using the Data Toggle method after an
Erase cycle, Figure 5 still applies. the Toggle Flag
(DQ6) bit toggles until the Erase cycle is complete.
A 1 on the Error Flag (DQ5) bit indicates a time-out
condition on the Erase cycle; a 0 indicates no er-
ror. The MCU can read any location within the sec-
tor being erased to get the Toggle Flag (DQ6) bit
and the Error Flag (DQ5) bit.
PSDsoft Express generates ANSI C code func-
tions which implement these Data Toggling algo-
rithms.
Unlock Bypass.
The Unlock Bypass instructions
allow the system to program bytes to the Flash
memories faster than using the standard Program
instruction. The Unlock Bypass mode is entered
by first initiating two Unlock cycles. This is followed
by a third Write cycle containing the Unlock By-
pass code, 20h (as shown in Table 7).
The Flash memory then enters the Unlock Bypass
mode. A two-cycle Unlock Bypass Program in-
struction is all that is required to program in this
mode. The first cycle in this instruction contains
the Unlock Bypass Program code, A0h. The sec-
ond cycle contains the program address and data.
Additional data is programmed in the same man-
ner. These instructions dispense with the initial
two Unlock cycles required in the standard Pro-
gram instruction, resulting in faster total Flash
memory programming.
During the Unlock Bypass mode, only the Unlock
Bypass Program and Unlock Bypass Reset Flash
instructions are valid.
To exit the Unlock Bypass mode, the system must
issue the two-cycle Unlock Bypass Reset Flash in-
struction. The first cycle must contain the data
90h; the second cycle the data 00h. Addresses are
Don’t Care for both cycles. The Flash memory
then returns to Read mode.
Erasing Flash Memory
Flash Bulk Erase.
The Flash Bulk Erase instruc-
tion uses six Write operations followed by a Read
operation of the status register, as described in
Table 7. If any byte of the Bulk Erase instruction is
wrong, the Bulk Erase instruction aborts and the
device is reset to the Read Flash memory status.
During a Bulk Erase, the memory status may be
checked by reading the Error Flag (DQ5) bit, the
Toggle Flag (DQ6) bit, and the Data Polling Flag
(DQ7) bit, as detailed in the section entitled “Pro-
gramming Flash Memory”, on page 19. The Error
Flag (DQ5) bit returns a 1 if there has been an
Erase Failure (maximum number of Erase cycles
have been executed).
It is not necessary to program the memory with
00h because the PSD automatically does this be-
fore erasing to 0FFh.
During execution of the Bulk Erase instruction, the
Flash memory does not accept any instructions.
Flash Sector Erase.
The Sector Erase instruc-
tion uses six Write operations, as described in Ta-
ble 7. Additional Flash Sector Erase codes and
Flash memory sector addresses can be written
subsequently to erase other Flash memory sec-
tors in parallel, without further coded cycles, if the
additional bytes are transmitted in a shorter time
than the time-out period of about 100 μs. The input
of a new Sector Erase code restarts the time-out
period.
The status of the internal timer can be monitored
through the level of the Erase Time-out Flag (DQ3)
bit. If the Erase Time-out Flag (DQ3) bit is 0, the
Sector Erase instruction has been received and
the time-out period is counting. If the Erase Time-
out Flag (DQ3) bit is 1, the time-out period has ex-
pired and the PSD is busy erasing the Flash mem-
READ
DQ5 & DQ6
START
READ DQ6
FAIL
PASS
AI01370B
D=
TOGGLE
NO
NO
YES
YES
DQ5
= 1
NO
YES
D=
TOGGLE
相關PDF資料
PDF描述
PSD934F2V-20MI Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD934F2V
PSD934F2V-15J Low Power Economy BiCMOS Current Mode PWM 8-TSSOP -40 to 85
PSD934F2V-15M Flash In-System Programmable ISP Peripherals For 8-bit MCUs
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相關代理商/技術參數(shù)
參數(shù)描述
PSD834F2V-15J 功能描述:CPLD - 復雜可編程邏輯器件 3.0V 2M 150ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-15M 功能描述:CPLD - 復雜可編程邏輯器件 3.0V 2M 150ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-20JI 功能描述:CPLD - 復雜可編程邏輯器件 3.0V 2M 200ns RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
PSD834F2V-20MI 功能描述:SPLD - 簡單可編程邏輯器件 3.0V 2M 200ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
PSD835G2-70U 功能描述:靜態(tài)隨機存取存儲器 5.0V 4M 70ns RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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