參數(shù)資料
型號: PPC5605BCLU64
廠商: Freescale Semiconductor
文件頁數(shù): 71/112頁
文件大小: 0K
描述: MCU 32BIT 768K 64MHZ
標(biāo)準(zhǔn)包裝: 40
系列: MPC56xx Qorivva
核心處理器: e200z0h
芯體尺寸: 32-位
速度: 64MHz
連通性: CAN,I²C,LIN,SCI,SPI
外圍設(shè)備: POR,PWM,WDT
輸入/輸出數(shù): 149
程序存儲器容量: 768KB(768K x 8)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 4K x 16
RAM 容量: 64K x 8
電壓 - 電源 (Vcc/Vdd): 3 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 29x10b,5x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 176-LQFP
包裝: 托盤
Electrical characteristics
MPC5607B Microcontroller Data Sheet, Rev. 7
Freescale Semiconductor
61
4.10
Flash memory electrical characteristics
4.10.1
Program/erase characteristics
Table 28 shows the program and erase characteristics.
Table 28. Program and erase specifications
Symbol
C
Parameter
Conditions
Value
Unit
Min Typ1
1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to
change pending device characterization.
Initial
max2
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
Max3
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
tdwprogram
CC C Double word (64 bits) program time4
4 Actual hardware programming times. This does not include software overhead.
Code Flash
18
50
500
s
Data Flash
22
t16Kpperase
16 KB block preprogram and erase time
Code Flash
200
500
5000
ms
Data Flash
300
t32Kpperase
32 KB block preprogram and erase time
Code Flash
300
600
5000
ms
Data Flash
400
t128Kpperase
128 KB block preprogram and erase time
Code Flash
600
1300
7500
ms
Data Flash
800
tesus
D Erase Suspend Latency
30
s
tESRT
C Erase Suspend Request Rate5
5 Time between erase suspend resume and the next erase suspend request
Code Flash
20
ms
Data Flash
10
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