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| 型號： | PMWD16UN |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-channel uTrenchMOS ultra low level FET |
| 中文描述： | 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153 |
| 封裝： | PLASTIC, TSSOP-8 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 94K |
| 代理商： | PMWD16UN |
9397 750 14724
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 24 March 2005
6 of 12
Philips Semiconductors
PMWD16UN
Dual N-channel
μ
TrenchMOS ultra low level FET
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values
T
j
= 25
°
C and 150
°
C; V
DS
> I
D
×
R
DSon
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 5.
Fig 6.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaa268
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
V
DS
(V)
I
D
(A)
1.0
1.1
1.2
1.8
V
GS
(V)= 1.3
4.5
003aaa269
0
2
4
6
8
10
I
D
(A)
0
0.5
1
1.5
2
V
GS
(V)
T
j
= 150
°
C
25
°
C
003aaa270
0
20
40
60
80
0
2
4
6
8
10
I
D
(A)
R
DSon
(m
)
4.5
1.3
2.5
1.2
V
GS
(V) = 1.8
1.1
03aa27
0
0.5
1
1.5
2
-60
0
60
120
180
T
j
(
°
C)
a
a
R
DSon 25 C
°
)
------------------------------
=
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參數(shù)描述 |
|---|---|
| PMWD16UN /T3 | 功能描述:MOSFET N-CH TRENCH DL 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD16UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD16UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWD18UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
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