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參數(shù)資料
| 型號： | PMWD16UN |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-channel uTrenchMOS ultra low level FET |
| 中文描述： | 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153 |
| 封裝： | PLASTIC, TSSOP-8 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 94K |
| 代理商： | PMWD16UN |
9397 750 14724
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 24 March 2005
2 of 12
Philips Semiconductors
PMWD16UN
Dual N-channel
μ
TrenchMOS ultra low level FET
3.
Ordering information
4.
Limiting values
[1]
Single device conducting.
Table 2:
Type number
Ordering information
Package
Name
TSSOP8
Description
plastic thin shrink small outline package; 8 leads; body width 4.4 mm
Version
SOT530-1
PMWD16UN
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
Max
20
20
±
10
9.9
5.9
39.5
3.1
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
sp
= 25
°
C; V
GS
= 4.5 V;
Figure 2
and
3
T
sp
= 100
°
C; V
GS
= 4.5 V;
Figure 2
T
sp
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
sp
= 25
°
C;
Figure 1
[1]
-
[1]
-
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
sp
= 25
°
C; pulsed; t
p
≤
10
μ
s
peak drain current
total power dissipation
storage temperature
junction temperature
[1]
-
[1]
-
55
55
T
sp
= 25
°
C
[1]
-
2.6
10
A
A
[1]
-
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