參數(shù)資料
型號(hào)： PH3830L
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS logic level FET
中文描述： 98 A, 30 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝： PLASTIC, LFPAK-5
文件頁(yè)數(shù)： 5/12頁(yè)
文件大小： 92K
代理商： PH3830L
Philips Semiconductors
PH3830L
N-channel TrenchMOS logic level FET
Product data
Rev. 03 — 2 March 2004
5 of 12
9397 750 12945
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 150
°
C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25
°
C
V
GS
=
±
15 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
= 5 V; I
D
= 25 A;
Figure 7
30
-
-
V
1
0.65
-
-
1.5
-
0.06
20
2
-
1
100
V
V
μ
A
nA
I
DSS
I
GSS
R
DSon
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
-
-
-
3.2
5.4
4
3.8
6.5
4.9
m
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
I
D
= 20 A; V
DD
= 10 V; V
GS
= 5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
33
11
11
3190 -
1050 -
457
30
88
58
57
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 10 V; f = 1 MHz;
Figure 11
-
-
-
-
-
V
DD
= 15 V; I
D
= 20 A; V
GS
= 4.5 V; R
G
= 4.7
-
-
0.85
42
1.2
-
V
ns
I
S
= 20 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PH3830L,115 功能描述:MOSFET N-CH TRENCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PH3830L 制造商:NXP Semiconductors 功能描述:MOSFET N 30V LFPAK
PH3830L115 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 98A 4-SOT-669
PH3855L 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
PH3855L T/R 功能描述:MOSFET N-CH TRENCH 55V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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