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參數(shù)資料
| 型號(hào)： | PDM21096LL12ST |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 120 ns, PDSO32 |
| 封裝： | PLASTIC, STSOP1-32 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 277K |
| 代理商： | PDM21096LL12ST |
PDM21096LL
Rev. 0.0 - 4/30/98
3
ADVANCED
Recommended DC Operating Conditions
DC Electrical Characteristics (V
CC = 2.7V ± 0.3V)
NOTE:1.VIL(min) = –3.0V for pulse width less than 20 ns. 2. VCC = 2.7V, 25C.
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
2.4
2.7
3.0
V
VSS
Supply Voltage
0
V
Commercial
Ambient Temperature
0
25
70
°C
Symbol
Parameter
Test Conditions
Min.
Typ. (2)
Max.
Unit
ILI
Input Leakage Current
VCC = MAX., VIN
= Vss to VCC
–1
—
1
A
ILO
Output Leakage Current
VCC= MAX.,
CE= VIH
VOUT = Vss to
VCC
–1
—
1
A
VIL
Input Low Voltage
–0.3(1)
—
0.8
V
VIH
Input High Voltage
2.2
—
Vcc+0.3
V
VOL
Output Low Voltage
IOL= 2mA, VCC
= Min.
—
0.4
V
VOH
Output High Voltage
IOH = –1 mA,
VCC = Min.
2.2
—
V
ICC
Operating Power Supply
Current
VCC = MAX
CE = VIL
IOUT = 0 mA
f = fMAX
—
35
mA
ISB
Standby Current (TTL)
VCC = MAX
CE = VIH
——
1
mA
ISB1
Full Standby Current
(CMOS)
VCC = MAX
CE
≥ V
CC -0.2V
VIN ≥ VCC -0.2V
or
≤ 0.2V
—
2.5
A50
A
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