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參數(shù)資料
| 型號： | PD57002S |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 中文描述： | 射頻功率晶體管LdmoST塑料家庭 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 131K |
| 代理商： | PD57002S |
1/16
March, 7 2003
PD57002
PD57002S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 2 W with 15 dB gain @ 960 MHz / 28 V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57002 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1000
MHz. The PD57002 is designed for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for digital cellular
BTS applications requiring high linearity.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD57002
BRANDING
PD57002
PowerSO-10RF
(straight lead)
ORDER CODE
PD57002S
BRANDING
PD57002S
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
°
C)
Symbol
V
(BR)DSS
Drain-Source Voltage
V
GS
Gate-Source Voltage
I
D
Drain Current
P
DISS
Power Dissipation (@ Tc = 70
°
C)
Tj
Max. Operating Junction Temperature
T
STG
Storage Temperature
Parameter
Value
Unit
65
V
±
20
V
0.25
A
4.75
W
165
°
C
-65 to +150
°
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
20
°
C/W
Mounting recommendations are available in
www.st.com/rf/
(look for application note AN1294)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PD57006 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD57006S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD57018 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD57018S | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| PD57030 | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PD57002S-E | 功能描述:射頻MOSFET電源晶體管 POWER R.F. RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57006 | 功能描述:射頻MOSFET電源晶體管 N-Ch 65 Volt 1.0 Amp RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57006-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY |
| PD57006-E | 功能描述:射頻MOSFET電源晶體管 RF POWER TRANS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PD57006-E_10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
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