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| 型號(hào)： | PA28F008S5-85 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 中文描述： | 1M X 8 FLASH 5V PROM, 85 ns, PDSO44 |
| 封裝： | 13.30 X 28.20 MM, PLASTIC, SOP-44 |
| 文件頁(yè)數(shù)： | 12/37頁(yè) |
| 文件大?。?/td> | 611K |
| 代理商： | PA28F008S5-85 |
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BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY
E
12
PRODUCT PREVIEW
Table 2. Bus Operations
Mode
Notes
RP#
CE#
OE#
WE#
Address
V
PP
DQ
0
–7
RY/BY#
Read
1,2,3
V
IH
or
V
HH
V
IH
or
V
HH
V
IH
or
V
HH
V
IL
V
IH
or
V
HH
V
IH
or
V
HH
V
IL
V
IL
V
IH
X
X
D
OUT
X
Output Disable
3
V
IL
V
IH
V
IH
X
X
High Z
X
Standby
3
V
IH
X
X
X
X
High Z
X
Deep Power-Down
4
X
X
X
X
X
High Z
V
OH
V
OH
Read Identifier Codes
V
IL
V
IL
V
IH
See
Figure 5
X
Note 5
Write
3,6,7
V
IL
V
IH
V
IL
X
X
D
IN
X
NOTES:
1. Refer to DC Characteristics. When V
PP
≤
V
PPLK
, memory contents can be read, but not altered.
2. X can be V
or V
IH
for control and address input pins and V
PPLK
or V
PPH1/2
for V
PP
. See DC Characteristics for V
PPLK
and
V
PPH1/2
voltages.
3. RY/BY# is V
OL
when the WSM is executing internal block erase, program, or lock-bit configuration algorithms. It is V
OH
when the WSM is not busy, in block erase suspend mode (with program inactive), program suspend mode, or deep power-
down mode.
4.
RP# at GND ± 0.2V ensures the lowest deep power-down current.
5. See Section 4.2 for read identifier code data.
6. Command writes involving block erase, program, or lock-bit configuration are reliably executed when V
PP
= V
PPH1/2
and
V
CC
= V
CC1/2
(see Section 6.2 for operating conditions).
7. Refer to Table 3 for valid D
IN
during a write operation.
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相關(guān)代理商/技術(shù)參數(shù) |
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| PA28F008SA-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (1-MBIT x 8) FlashFileTM MEMORY |
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| PA28F008SA-L200 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| PA28F008SA-L250 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
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