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參數(shù)資料
| 型號(hào)： | OPA699IDR |
| 元件分類(lèi)： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | Wideband, High Gain VOLTAGE LIMITING AMPLIFIER |
| 中文描述： | 寬帶，高增益電壓限幅放大器 |
| 文件頁(yè)數(shù)： | 4/25頁(yè) |
| 文件大?。?/td> | 461K |
| 代理商： | OPA699IDR |
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OPA699
SBOS261B
4
www.ti.com
OPA699ID
0
°
C to
70
°
C
(2)
–
40
°
C to
+85
°
C
(2)
MIN/
MAX
LEVEL
(3)
TEST
PARAMETER
CONDITIONS
+25
°
C
+25
°
C
(1)
UNITS
OUTPUT VOLTAGE LIMITERS
Output Voltage Limited Range
Default Limit Voltage, Upper
Pins 5 and 8
±
3.8
+3.5
–
3.5
400
—
typ
min
max
min
max
C
A
A
B
B
Limiter Pins Open
+3.3
–
3.3
400
±
4.3
+3.2
–
3.2
400
±
4.3
+3.1
–
3.1
400
±
4.3
V
V
Lower
Minimum Limiter Separation (V
H
–
V
L
)
Maximum Limit Voltage
Limiter Input Bias Current Magnitude
(6)
Maximum
Minimum
Average Drift
Limiter Input Impedance
Limiter Feedthrough
(7)
DC Performance in Limit Mode
Limiter Offset Voltage
Op Amp Input Bias Current Shift
(4)
AC Performance in Limit Mode
Limiter Small-Signal Bandwidth
Limiter Slew Rate
(8)
Limited Step Response
Overshoot
Recovery Time
Linearity Guardband
(9)
mV
V
V
O
= 0
50
50
—
60
40
62
38
30
64
36
35
μ
A
μ
A
max
min
max
typ
typ
A
A
B
C
C
nA/
°
C
M
|| pF
dB
3.4 || 1
–
60
f = 5MHz
V
IN
=
±
0.7V
(V
O
–
V
) or (V
–
V
)
Linear
Limited Operation
±
10
3
±
30
±
35
±
40
mV
μ
A
max
typ
A
C
V
IN
=
±
0.7V, V
O
< 0.02V
PP
600
125
MHz
V/
μ
s
typ
typ
C
C
V
IN
= 0V to
±
0.7V Step
V
=
±
0.7V to 0V Step
f = 5MHz, V
O
= 2V
PP
250
1
30
mV
ns
mV
typ
max
typ
C
B
C
1.9
2
2.1
THERMAL CHARACTERISTICS
Temperature Range
Thermal Resistance
D
SO-8
Specification, I
Junction-to-Ambient
–
40 to +85
°
C
typ
C
125
°
C/W
typ
C
NOTES: (1) Junction temperature = ambient temperature for low temperature limit and +25
°
C Test Level A specifications. Junction temperature = ambient
temperature +23
°
C at high temperature limit Test Level A specifications.
(2) Junction temperature = ambient at low temperature limit; junction temperature = ambient +1
°
C at high temperature limit for over-temperature
tested specifications.
(3) Test Levels: (A) 100% tested at +25
°
C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value for information only.
(4) Current is considered positive out-of-node.
(5) CMIR tested as < 3dB degradation from minimum CMRR at specified limits.
(6) I
(V
bias current) is positive, and I
(V
bias current) is negative, under these conditions. See Note 3 and Figures 1 and 12.
(7) Limiter feedthrough is the ratio of the output magnitude to the sinewave added to V
(or V
) when V
= 0.
(8) V
slew rate conditions are: V
= +0.7V, G = +6, V
=
–
2V, V
= step between 2V and 0V. V
slew rate conditions are similar.
(9) Linearity Guardband is defined for an output sinusoid (f = 1MHz, V
= 2V
) centered between the limiter levels (V
H
and V
L
). It is the difference
between the limiter level and the peak output voltage where SFDR decreases by 3dB (see Figure 8).
ELECTRICAL CHARACTERISTICS: V
S
=
±
5V
(Cont.)
Boldface
limits are tested at
+25
°
C.
G = +6, R
F
= 750
,
R
L
= 500
, V
H
=
–
V
L
= 2V, (Figure 1 for AC performance only), unless otherwise noted.
TYP
MIN/MAX OVER TEMPERATURE
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| OPA699IDRG4 | 功能描述:高速運(yùn)算放大器 Wideband High Gain Vltg Limiting RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| OPA699M | 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:GAIN 4 STABLE WIDEBAND VOLTAGE LIMITING AMPLIFIER |
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