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參數(shù)資料
| 型號(hào)： | NSS30070MR6T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 30 V, 0.7 A, Low VCE(sat) PNP Transistor(30V, 0.7A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 700 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, MINIATURE, CASE 318F-05, SC-74, 6PIN |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | NSS30070MR6T1G |
NSS30070MR6T1G
http://onsemi.com
4
PACKAGE DIMENSIONS
STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE
SC74
CASE 318F05
ISSUE K
2
3
4
5
6
A
L
1
S
G
D
B
H
C
0.05 (0.002)
DIM
A
B
C
D
G
H
J
K
L
M
S
MIN
0.1142
0.0512
0.0354
0.0098
0.0335
0.0005
0.0040
0.0079
0.0493
MAX
0.1220
0.0669
0.0433
0.0197
0.0413
0.0040
0.0102
0.0236
0.0649
10
0.1181
MIN
2.90
1.30
0.90
0.25
0.85
0.013
0.10
0.20
1.25
MAX
3.10
1.70
1.10
0.50
1.05
0.100
0.26
0.60
1.65
10
3.00
MILLIMETERS
INCHES
0
0
0.0985
2.50
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F01, 02, 03 OBSOLETE. NEW
STANDARD 318F04.
M
J
K
0.7
0.028
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.95
0.037
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Japan
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291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone
: 81357733850
NSS30070MR6/D
LITERATURE FULFILLMENT
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P.O. Box 61312, Phoenix, Arizona 850821312 USA
Phone
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Fax
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Toll Free USA/Canada
Email
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For additional information, please contact your
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| NSS30071MR6T1G | 功能描述:兩極晶體管 - BJT 700mA 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30100LT1G | 功能描述:兩極晶體管 - BJT 2A 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30101LT1G | 功能描述:兩極晶體管 - BJT 1A 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30201MR6T1G | 功能描述:兩極晶體管 - BJT 2A 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS35200CF8T1G | 功能描述:兩極晶體管 - BJT 2A 35V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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