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參數(shù)資料
| 型號： | NSS30070MR6T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 V, 0.7 A, Low VCE(sat) PNP Transistor(30V, 0.7A, 低VCE(sat) PNP晶體管) |
| 中文描述： | 700 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, MINIATURE, CASE 318F-05, SC-74, 6PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | NSS30070MR6T1G |
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 0
1
Publication Order Number:
NSS30070MR6/D
NSS30070MR6T1G
30 V, 0.7 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors
are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DCDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a PbFree Device
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
30
V
CollectorBase Voltage
V
CBO
40
V
EmitterBase Voltage
V
EBO
5.0
V
Collector Current
I
C
700
mA
Base Current
I
B
350
mA
Total Power Dissipation @ T
C
= 25
°
C
Total Power Dissipation @ T
C
= 85
°
C
Thermal Resistance JunctiontoAmbient
(Note 1)
P
D
P
D
R
JA
342
178
366
mW
mW
°
C/W
Total Power Dissipation @ T
C
= 25
°
C
Total Power Dissipation @ T
C
= 85
°
C
Thermal Resistance JunctiontoAmbient
(Note 2)
P
D
P
D
R
JA
665
346
188
mW
mW
°
C/W
Operating and Storage Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
1. Minimum FR4 or G10 PCB, Operating to Steady State.
2. Mounted onto a 2
″
square FR4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single sided),
Operating to Steady State.
http://onsemi.com
SC74
CASE 318F
STYLE 2
DEVICE MARKING
VS2 = Specific Device Code
M
= Date Code
12
4
30 VOLTS
0.7 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
320 m
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
3
5
6
VS2
M
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
Package
Shipping
ORDERING INFORMATION
NSS30070MR6T1G
SC74
(PbFree)
3000/Tape & Reel
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| NSS30071MR6T1G | 功能描述:兩極晶體管 - BJT 700mA 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30100LT1G | 功能描述:兩極晶體管 - BJT 2A 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30101LT1G | 功能描述:兩極晶體管 - BJT 1A 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS30201MR6T1G | 功能描述:兩極晶體管 - BJT 2A 30V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSS35200CF8T1G | 功能描述:兩極晶體管 - BJT 2A 35V Low VCEsat RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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