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參數(shù)資料
| 型號： | NESG3031M14-T3-AFB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD LESS, MINIMOLD PACKAGE-4 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | NESG3031M14-T3-AFB |
30
25
20
10
5
0
1
10
100
VCE = 1 V
f = 2 GHz
15
30
20
15
10
5
0
1
10
100
VCE = 2 V
f = 2 GHz
25
30
20
15
10
5
0
1
10
100
VCE = 3 V
f = 2 GHz
25
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
1 000
100
10
0.1
100
VCE = 1 V
1
1 000
100
10
0.1
100
VCE = 2 V
1
1 000
100
10
0.1
100
VCE = 3 V
1
Remark The graphs indicate nominal characteristics.
Data Sheet PU10415EJ03V0DS
4
NESG3031M14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG3032M14 | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-A | 功能描述:射頻硅鍺晶體管 NPN Germanium Amp & Oscillator RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| NESG3032M14-EVNF24 | 功能描述:射頻硅鍺晶體管 Silicon Germanium Amp and Oscillator RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| NESG3032M14-T3 | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-T3-A | 功能描述:射頻硅鍺晶體管 NPN Silicn Germanium Amp/Oscilltr RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
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