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參數(shù)資料
| 型號： | NESG3031M14-T3-AFB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD LESS, MINIMOLD PACKAGE-4 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | NESG3031M14-T3-AFB |
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
0.3
0.2
02
4
6
8
10
f = 1 MHz
0.1
VCE = 1 V
10
1
0.1
0.001
0.0001
0.01
0.00001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
100
VCE = 2 V
10
1
0.1
0.001
0.0001
0.01
0.00001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
100
VCE = 3 V
10
1
0.1
0.001
0.0001
0.01
0.00001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
100
20
40
30
10
0
2
135
IB = 20 A
40 A
60 A
80 A
100 A
120 A
140 A
160 A
180 A
200 A
4
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on glass epoxy PWB
(1.08 cm2
× 1.0 mm (t))
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
250
200
150
100
50
0
25
50
75
100
125
150
Remark The graphs indicate nominal characteristics.
Data Sheet PU10415EJ03V0DS
3
NESG3031M14
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG3032M14 | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-A | 功能描述:射頻硅鍺晶體管 NPN Germanium Amp & Oscillator RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| NESG3032M14-EVNF24 | 功能描述:射頻硅鍺晶體管 Silicon Germanium Amp and Oscillator RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| NESG3032M14-T3 | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-T3-A | 功能描述:射頻硅鍺晶體管 NPN Silicn Germanium Amp/Oscilltr RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
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