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參數(shù)資料
| 型號： | NESG3031M14-T3-AFB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD LESS, MINIMOLD PACKAGE-4 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 91K |
| 代理商： | NESG3031M14-T3-AFB |
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
100
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 6 mA
220
300
380
RF Characteristics
Insertion Power Gain
S21e2 VCE = 3 V, IC = 20 mA, f = 5.8 GHz
6.5
9.0
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 6 mA, f = 2.4 GHz,
ZS = ZSopt, ZL = ZLopt
0.6
dB
Noise Figure (2)
NF
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
0.95
dB
Noise Figure (3)
NF
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
1.1
1.5
dB
Associated Gain (1)
Ga
VCE = 2 V, IC = 6 mA, f = 2.4 GHz,
ZS = ZSopt, ZL = ZLopt
16.0
dB
Associated Gain (2)
Ga
VCE = 2 V, IC = 6 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt
10.0
dB
Associated Gain (3)
Ga
VCE = 2 V, IC = 6 mA, f = 5.8 GHz,
ZS = ZSopt, ZL = ZLopt
7.5
9.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
0.15
0.25
pF
Maximum Stable Power Gain
MSG
Note 3
VCE = 3 V, IC = 20 mA, f = 5.8 GHz
12.0
15.0
dB
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
13.0
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP3
VCE = 3 V, IC (set) = 20 mA,
f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt
18.0
dBm
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank
FB
Marking
zJ
hFE Value
220 to 380
S21
S12
Data Sheet PU10415EJ03V0DS
2
NESG3031M14
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參數(shù)描述 |
|---|---|
| NESG3032M14 | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-A | 功能描述:射頻硅鍺晶體管 NPN Germanium Amp & Oscillator RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG3032M14-EVNF24 | 功能描述:射頻硅鍺晶體管 Silicon Germanium Amp and Oscillator RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG3032M14-T3 | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SILICON GERMANIUM RF TRANSISTOR |
| NESG3032M14-T3-A | 功能描述:射頻硅鍺晶體管 NPN Silicn Germanium Amp/Oscilltr RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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