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參數(shù)資料
| 型號： | NCN6004AFTBR2 |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 18/40頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC INTERFACE SAM/SIM DUAL 48TQFP |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 應(yīng)用： | PC，PDA |
| 接口： | 微控制器 |
| 電源電壓： | 1.8 V ~ 5.5 V |
| 封裝/外殼： | 48-TQFP 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 48-TQFP（7x7） |
| 包裝： | 剪切帶 (CT) |
| 安裝類型： | 表面貼裝 |
| 其它名稱： | NCN6004AFTBR2OSCT |
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NCN6004A
http://onsemi.com
25
Figure 17. Typical CRD_VCC Ripple Voltage
NOTE:
Operating conditions under full output load.
Figure 18. Typical Card Voltage Turn ON and Startup
Sequence
Figure 19. Typical Card Supply Turn OFF
58
60
62
64
66
68
70
72
74
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Figure 20. CRD_VCC Efficiency as a Function of the
Input Supply Voltage
Vbat (V)
Eff
(%)
Vout = 1.8 V
Vout = 5.0 V
Vout = 3.0 V
Lout = 22 mH
ESR = 2
W
The curves in Figure 20, illustrate the typical behavior
under full output current load (35 mA, 60 mA and 65 mA),
according to EMV specifications.
During the operation, the inductor is subject to high peak
current as depicted in Figure 21 and the magnetic core must
sustain this level of current without damage. In particular,
the ferrite material shall not be saturated to avoid
uncontrolled current spike during the charge up cycle.
Moreover, since the DC/DC efficiency depends upon the
losses developed into the active and passive components,
selecting a low ESR inductor is preferred to reduce these
losses to a minimum.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NCN6004AFTBR2G | 功能描述:輸入/輸出控制器接口集成電路 2.7V POS/ATM Smart Card Interface RoHS:否 制造商:Silicon Labs 產(chǎn)品: 輸入/輸出端數(shù)量: 工作電源電壓: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-64 封裝:Tray |
| NCN6010 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
| NCN6010D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SIM Card Supply and Level Shifter |
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