參數(shù)資料
型號(hào)： NAND01GR4B2BZA1F
廠商： STMICROELECTRONICS
元件分類(lèi)： PROM
英文描述： 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝： 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁(yè)數(shù)： 6/63頁(yè)
文件大?。?/td> 684K
代理商： NAND01GR4B2BZA1F
Memory array organization
NAND01G-B2B, NAND02G-B2C
14/63
2
Memory array organization
The memory array is made up of NAND structures where 32 cells are connected in series.
The memory array is organized in blocks where each block contains 64 pages. The array is
split into two areas, the main area and the spare area. The main area of the array is used to
store data whereas the spare area is typically used to store Error correction Codes, software
flags or Bad Block identification.
In x8 devices the pages are split into a 2048 Byte main area and a spare area of 64 Bytes.
In the x16 devices the pages are split into a 1,024 Word main area and a 32 Word spare
2.1
Bad blocks
The NAND Flash 2112 Byte/ 1056 Word Page devices may contain Bad Blocks, that is
blocks that contain one or more invalid bits whose reliability is not guaranteed. Additional
Bad Blocks may develop during the lifetime of the device.
The Bad Block Information is written prior to shipping (refer to Section 8.1: Bad Block
Management for more details).
Table 4: Valid Blocks shows the minimum number of valid blocks in each device. The values
shown include both the Bad Blocks that are present when the device is shipped and the Bad
Blocks that could develop later on.
These blocks need to be managed using Bad Blocks Management, Block Replacement or
Error Correction Codes (refer to Section 8: Software algorithms).
Table 4.
Valid Blocks
Density of Device
Min
Max
2 Gbits
2008
2048
1 Gbit
1004
1024
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND01GR4B2BZA6 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2BZA6E 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2BZA6F 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2BZB1 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2BZB6 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
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