參數(shù)資料
型號(hào): NAND01GR4B2BZA1F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 64M X 16 FLASH 1.8V PROM, 25000 ns, PBGA63
封裝: 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VFBGA-63
文件頁數(shù): 49/63頁
文件大?。?/td> 684K
代理商: NAND01GR4B2BZA1F
NAND01G-B2B, NAND02G-B2C
DC And AC parameters
53/63
Figure 26.
Page Program AC Waveform
1.
A fifth address cycle is required for 2Gb devices only.
CL
E
W
AL
R
I/O
RB
SR0
ai13110
N
Last
10h
70h
80h
Page Program
Setup Code
Confirm
Code
Read Status Register
tWLWL
tWHBL
tBLBH2
Page
Program
Address Input
Data Input
Add.N
cycle 1
Add.N
cycle 4
Add.N
cycle 3
Add.N
cycle 2
(Write Cycle time)
(Program Busy time)
Add.N
cycle 5
tWHWH
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NAND01GR4B2BZA6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2BZA6E 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2BZA6F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR4B2BZB1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2BZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory