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參數(shù)資料
| 型號(hào)： | NAND256W4A2AZA6E |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 3V PROM, 12000 ns, PBGA55 |
| 封裝： | 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55 |
| 文件頁數(shù)： | 1/58頁 |
| 文件大?。?/td> | 1406K |
| 代理商： | NAND256W4A2AZA6E |
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August 2008
Rev 15
1
NAND128-A NAND256-A
128-Mbit or 256-Mbit, 528-byte/264-word page,
3 V, NAND flash memories
Features
■
High density NAND flash memories
– Up to 256-Mbit memory array
– Up to 32-Mbit spare area
– Cost effective solutions for mass storage
applications
●
NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
– Pinout compatibility for all densities
■
Supply voltage
–VDD = 2.7 to 3.6 V
■
Page size
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
■
Block size
– x8 device: (16 K + 512 spare) bytes
– x16 device: (8 K + 256 spare) words
■
Page read/program
– Random access: 12 s (max)
– Sequential access: 50 ns (min)
– Page program time: 200 s (typ)
■
Copy back program mode
– Fast page copy without external buffering
■
Fast block erase
– Block erase time: 2 ms (typical)
■
Status register
■
Electronic signature
■
Chip enable ‘don’t care’
– Simple interface with microcontroller
■
Serial number option
■
Hardware data protection
– Program/erase locked during power
transitions
■
Data integrity
– 100,000 program/erase cycles
– 10 years data retention
■
RoHS compliance
– Lead-free components are compliant with
the RoHS directive
■
Development tools
– Error correction code software and
hardware models
– Bad blocks management and wear leveling
algorithms
– File system OS native reference software
– Hardware simulation models
TSOP48 12 x 20 mm
FBGA
VFBGA55 8 x 10 x 1 mm
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| NAND32GAH0HZA5E | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Trays |
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| NAND32GAH0PZA5F | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel |
| NAND32GAHAKZO6E | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays |
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