參數(shù)資料
型號: NAND256W4A2AZA6E
廠商: NUMONYX
元件分類: PROM
英文描述: 16M X 16 FLASH 3V PROM, 12000 ns, PBGA55
封裝: 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55
文件頁數(shù): 31/58頁
文件大小: 1406K
代理商: NAND256W4A2AZA6E
NAND128-A, NAND256-A
DC and AC parameters
37/58
10
DC and AC parameters
This section summarizes the operating and measurement conditions and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables in this
section are derived from tests performed under the measurement conditions summarized in
Table 16. Designers should check that the operating conditions in their circuit match the
measurement conditions when relying on the quoted parameters.
Table 16.
Operating and AC measurement conditions
Parameter
NAND flash
Units
Min
Max
Supply voltage (VDD)
3 V devices
2.7
3.6
V
Ambient (TA)
Grade 6
–40
85
°C
Load capacitance (CL) (1 TTL GATE
and CL)
3 V devices (2.7 - 3.6 V)
50
pF
3 V devices (3.0 - 3.6V)
100
pF
Input pulses voltages
3 V devices
0.4
2.4
V
Input and output timing ref. voltages
3 V devices
1.5
V
Input rise and fall times
5
ns
Output circuit resistors, Rref
8.35
k
Table 17.
Capacitance(1)(2)
1.
TA = 25 °C, f = 1 MHz. CIN and CI/O are not 100% tested.
2.
Input/output capacitances double on stacked devices.
Symbol
Parameter
Test condition
Typ
Max
Unit
CIN
Input capacitance
VIN = 0 V
10
pF
CI/O
Input/output capacitance
VIL = 0 V
10
pF
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