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參數(shù)資料
| 型號： | MUN5237DW1T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Dual Bias Resistor Transistors |
| 中文描述： | 雙偏置電阻晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 199K |
| 代理商： | MUN5237DW1T1 |
LESHAN RADIO COMPANY, LTD.
MUN5211dw–1/8
1
3
2
MUN5211DW1T1
Series
SOT
-
363
CASE 419B STYLE1
6
4
5
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
1
3
2
6
4
5
Q
1
Q
2
R
1
R
2
R
1
R
2
7X
MARKING DIAGRAM
1
3
2
6
4
5
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
7X = Device Marking
=
(See Page 2)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Symbol Value
V
CBO
V
CEO
I
C
Unit
Vdc
Vdc
mAdc
50
50
100
Symbol
P
D
Max
Unit
mW
187 (Note 1.)
mW/°C
Thermal Resistance –
Junction-to-Ambient
R
θ
JA
670 (Note 1.)
490 (Note 2.)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
R
θ
JA
°C/W
R
θ
JL
°C/W
T
J
, T
stg
°C
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low power surface mount applications where board space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MUN5237DW1T1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT Dual NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5237T1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5237T1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5238 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 2.2 k, R2 = k |
| MUN5238T1G | 制造商:ON Semiconductor 功能描述:NPN DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NPN DIGITAL TRANSISTOR (B |
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