參數(shù)資料
型號(hào)： MUN5136DW1T1
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Dual Bias Resistor Transistors
中文描述： 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： CASE 419B-02, SC-70, SC-88, 6 PIN
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 280K
代理商： MUN5136DW1T1
LESHAN RADIO COMPANY, LTD.
MUN5111dw–2/11
DEVICE MARKING AND RESISTOR VALUES
Device
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1 (Note 3.)
MUN5116DW1T1 (Note 3.)
MUN5130DW1T1 (Note 3.)
MUN5131DW1T1 (Note 3.)
MUN5132DW1T1 (Note 3.)
MUN5133DW1T1 (Note 3.)
MUN5134DW1T1 (Note 3.)
MUN5135DW1T1 (Note 3.)
MUN5136DW1T1 (Note 3.)
MUN5137DW1T1 (Note 3.)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= –50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= –50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= –6.0 V, I
C
= 0)
Package
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Marking
0A
0B
0C
0D
0E
0F
0G
0H
0J
0K
0L
0M
0N
0P
R
1
(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R
2
(K)
10
22
47
47
–
–
1.0
2.2
4.7
47
47
47
100
22
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Symbol
Min
Typ
Max
Unit
I
CBO
I
CEO
I
EBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–100
–500
–0.5
–0.2
–0.1
–0.2
–0.9
–1.9
–4.3
–2.3
–1.5
–0.18
–0.13
–0.2
–0.05
–0.13
–
–
nAdc
nAdc
mAdc
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
MUN5111DW1T1 Series
Collector-Base Breakdown Voltage (I
C
= –10
μ
A, I
E
= 0)
Collector-Emitter Breakdown Voltage(Note 4.)(I
C
= –2.0 mA,I
B
=0)
V
(BR)CEO
ON CHARACTERISTICS
(Note 4.)
Collector-Emitter Saturation Voltage (I
C
= –10mA,I
E
= –0.3 mA)
(I
C
= –10mA, I
B
= –5mA)
MUN5130DW1T1/MUN5131DW1T1
(I
C
= –10mA, I
B
= –1mA)
MUN5115DW1T1/MUN5116DW1T1
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
V
(BR)CBO
–50
–50
Vdc
Vdc
V
CE(sat)
–
–
–0.25
Vdc
相關(guān)PDF資料
PDF描述
MUN5136T1 Bias Resistor Transistor
MUN52xxDW1T1 Dual Bias Resistor Transistors
MUN52xxDW1T1 Dual Bias Resistor Transistors
MUN5211DW1T1 Dual Bias Resistor Transistors
MUN5237DW1T1 Dual Bias Resistor Transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MUN5136DW1T1G 制造商:ON Semiconductor 功能描述:SS SC88 BR XSTR PNP 50V - Tape and Reel
MUN5136T1 功能描述:TRANS BRT PNP 100MA 50V SOT-323 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242
MUN5136T1G 制造商:ON Semiconductor 功能描述:SS SC70 BR XSTR PNP 50V - Tape and Reel
MUN5137 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon
MUN5137DW 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon
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