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參數(shù)資料
| 型號(hào)： | MUN5136DW1T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Dual Bias Resistor Transistors |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419B-02, SC-70, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 280K |
| 代理商： | MUN5136DW1T1 |
LESHAN RADIO COMPANY, LTD.
MUN5111dw–1/11
1
3
2
MUN5111DW1T1
Series
SOT
-
363
CASE 419B STYLE1
6
4
5
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
1
3
2
6
4
5
Q
1
Q
2
R
1
R
2
R
1
R
2
XX
MARKING DIAGRAM
1
3
2
6
4
5
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
xx = Device Marking
=
(See Page 2)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Symbol Value
V
CBO
V
CEO
I
C
Unit
Vdc
Vdc
mAdc
–50
–50
–100
Symbol
P
D
Max
Unit
mW
187 (Note 1.)
mW/°C
Thermal Resistance –
Junction-to-Ambient
R
θ
JA
670 (Note 1.)
490 (Note 2.)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
R
θ
JA
°C/W
R
θ
JL
°C/W
T
J
, T
stg
°C
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MUN5136T1 | Bias Resistor Transistor |
| MUN52xxDW1T1 | Dual Bias Resistor Transistors |
| MUN52xxDW1T1 | Dual Bias Resistor Transistors |
| MUN5211DW1T1 | Dual Bias Resistor Transistors |
| MUN5237DW1T1 | Dual Bias Resistor Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUN5136DW1T1G | 制造商:ON Semiconductor 功能描述:SS SC88 BR XSTR PNP 50V - Tape and Reel |
| MUN5136T1 | 功能描述:TRANS BRT PNP 100MA 50V SOT-323 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類(lèi)型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類(lèi)型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱(chēng):SP000756242 |
| MUN5136T1G | 制造商:ON Semiconductor 功能描述:SS SC70 BR XSTR PNP 50V - Tape and Reel |
| MUN5137 | 制造商:WEITRON 制造商全稱(chēng):Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN5137DW | 制造商:WEITRON 制造商全稱(chēng):Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon |
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