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參數(shù)資料
| 型號： | MTSF3N02HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM |
| 中文描述： | 3800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MTSF3N02HD |
7
Motorola TMOS Power MOSFET Transistor Device Data
I
t, TIME
Figure 13. Reverse Recovery Time (trr)
di/dt = 300 A/
μ
s
Standard Cell Density
trr
High Cell Density
trr
tb
ta
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous drain–to–source voltage and drain cur-
rent that a transistor can handle safely when it is forward biased.
Curves are based upon maximum peak junction temperature
and a case temperature (TC) of 25
°
C. Peak repetitive pulsed
power limits are determined by using the thermal response data
in conjunction with the procedures discussed in AN569, “Tran-
sient Thermal Resistance – General Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10
μ
s. In addition
the total power averaged over a complete switching cycle
must not exceed (TJ(MAX) – TC)/(R
θ
JC).
Figure 14. Maximum Rated Forward Biased
Safe Operating Area
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 8 V
SINGLE PULSE
TC = 25
°
C
10
0.1
dc
10 ms
1
100
100
1 ms
100
μ
s
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