參數(shù)資料
型號: MTW10N100E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
中文描述: 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
文件頁數(shù): 1/8頁
文件大小: 192K
代理商: MTW10N100E
1
Motorola TMOS Power MOSFET Transistor Device Data
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N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transient.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
1000
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
10 ms)
1000
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
10
μ
s)
ID
ID
IDM
10
6.2
30
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
250
2.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 10 mH, RG = 25
)
500
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
0.50
40
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
from case for 10 seconds
TL
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
Order this document
by MTW10N100E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
10 AMPERES
1000 VOLTS
RDS(on) = 1.3 OHM
Motorola Preferred Device
D
S
G
CASE 340K–01, Style 1
TO–247AE
相關PDF資料
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MTW10N40E TMOS E-FET POWER FIELD EFFECT TRANSISTOR
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MTW45N10E TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
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相關代理商/技術參數(shù)
參數(shù)描述
MTW10N40E 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISTOR
MTW14N50E 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 14 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
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MTW15-51212 功能描述:線性和開關式電源 16W 5V 12V 2A -12V/0.2A RoHS:否 制造商:TDK-Lambda 產(chǎn)品:Switching Supplies 開放式框架/封閉式:Enclosed 輸出功率額定值:800 W 輸入電壓:85 VAC to 265 VAC 輸出端數(shù)量:1 輸出電壓(通道 1):20 V 輸出電流(通道 1):40 A 商用/醫(yī)用: 輸出電壓(通道 2): 輸出電流(通道 2): 安裝風格:Rack 長度: 寬度: 高度:
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