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參數(shù)資料
| 型號： | MTSF3N02HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM |
| 中文描述： | 3800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MTSF3N02HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
(1) (3)
V(BR)DSS
20
—
—
16
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
25
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
(3)
VGS(th)
0.7
—
0.98
2.65
1.1
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 3.8 Adc)
(VGS = 2.7 Vdc, ID = 1.9 Adc)
(Cpk
≥
2.0)
(3)
RDS(on)
—
—
30
40
40
50
m
Forward Transconductance (VDS = 10 Vdc, ID = 1.9 Adc)
(1)
gFS
4.0
7.5
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
15 Vdc V
Ciss
Coss
Crss
—
475
—
pF
Output Capacitance
—
255
—
Transfer Capacitance
—
110
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDS = 10 Vd
(DS
VGS = 4.5 Vdc, RG = 6
) (1)
3 8 Ad
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
9.5
—
ns
Rise Time
—
45
—
Turn–Off Delay Time
,I
,
—
50
—
Fall Time
—
62
—
Turn–On Delay Time
(VDD = 10 Vdc,D
(DD
VGS = 2.7 Vdc, RG = 6
) (1)
1 9 Ad
—
19
—
ns
Rise Time
—
130
—
Turn–Off Delay Time
,
—
38
—
Fall Time
—
47
—
Gate Charge
(VDS = 16 Vd
(DS
VGS = 4.5 Vdc)
3 8 Ad
—
12
17
nC
—
1.0
—
,I
,
—
5.0
—
—
3.5
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 3.8 Adc, VGS = 0 Vdc) (1)
(IS = 3.8 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.83
0.68
1.0
—
Vdc
Reverse Recovery Time
(IS = 3.8 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/
μ
s) (1)
3 8 Adc V
trr
ta
tb
—
46
—
ns
—
23
—
—
23
—
Reverse Recovery Storage Charge
QRR
—
0.05
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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