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參數(shù)資料
| 型號： | MTB40N10ET4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 119K |
| 代理商： | MTB40N10ET4 |
MTB40N10E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
0
1234
56
78
9
10
20
10
40
30
60
50
80
70
0
VGS = 10 V
TJ = 25°C
23
4
5
6
7
8
20
10
40
30
60
50
80
70
0
10
2030
40
5060
70
80
0.02
0.01
0.04
0.03
0.06
0.05
0.07
0
VGS = 10 V
TJ = 100°C
0
10
2030
40
5060
70
80
0.020
0.015
0.030
0.025
0.010
VGS = 10 V
TJ = 25°C
0.040
0.035
0.050
0.045
-50
-25
0
25
50
75
100
125
150
0.4
0.2
0.8
0.6
1.2
1.0
2.0
1.4
0
VGS = 10 V
ID = 20 A
1.6
1.8
0
102030
40
60
70
80
100
10
100
1000
1.0
VGS = 0 V
50
90
8 V
9 V
7 V
6 V
5 V
VDS ≥ 10 V
100°C
25°C
TJ = -55°C
25°C
-55°C
15 V
100°C
TJ = 125°C
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