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參數資料
| 型號： | MTB40N10ET4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數： | 5/12頁 |
| 文件大小： | 119K |
| 代理商： | MTB40N10ET4 |
MTB40N10E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥ 2.0) (Note 4.)
V(BR)DSS
100
–
112
–
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(Cpk
≥ 2.0) (Note 4.)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
–
2.9
6.7
4.0
–
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 20 Adc)
(Cpk
≥ 2.0) (Note 4.)
RDS(on)
–
0.033
0.04
Ohms
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 40 Adc)
(ID = 20 Adc, TJ = 125°C)
VDS(on)
–
1.9
1.7
Vdc
Forward Transconductance (VDS = 8.4 Vdc, ID = 20 Adc)
gFS
17
21
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
2305
3230
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
620
1240
Transfer Capacitance
f = 1.0 MHz)
Crss
–
205
290
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
td(on)
–
19
40
ns
Rise Time
(VDD = 50 Vdc, ID = 40 Adc,
VGS =10Vdc
tr
–
165
330
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
–
75
150
Fall Time
RG 9.1 )
tf
–
97
190
Gate Charge
(S
Fi
8)
QT
–
80
110
nC
(See Figure 8)
(VDS = 80 Vdc, ID = 40 Adc,
Q1
–
15
–
(VDS 80 Vdc, ID 40 Adc,
VGS = 10 Vdc)
Q2
–
40
–
Q3
–
29
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 40 Adc, VGS = 0 Vdc)
(IS = 40 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
–
0.96
0.88
1.0
–
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
–
152
–
ns
(See Figure 14)
(IS 40 Adc VGS 0 Vdc
ta
–
117
–
(IS = 40 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
–
35
–
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
–
1.0
–
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25
″ from package to center of die)
LD
–
3.5
4.5
–
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
–
7.5
–
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values. Cpk +
Max limit – Typ
3
sigma
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