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參數(shù)資料
| 型號： | MT58L256V18P1 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 256K x 18，Pipelined, SCD SyncBurst SRAM(4Mb，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器) |
| 中文描述： | 256 × 18，流水線，SCD的SyncBurst的SRAM（4MB，在流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲器） |
| 文件頁數(shù)： | 22/28頁 |
| 文件大?。?/td> | 445K |
| 代理商： | MT58L256V18P1 |
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4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L256L18P1_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
PIPELINED, SCD SYNCBURST SRAM
PRELIMINARY
WRITE TIMING
(WRITE timing parameters are contained on the following page.)
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A1
tCEH
tCES
BWE#,
BWa#-BWd#
Q
High-Z
ADV#
BURST READ
BURST WRITE
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A1)
D(A3)
D(A3 + 1)
D(A3 + 2)
D(A2 + 3)
A2
A3
D
Extended BURST WRITE
D(A2 + 2)
Single WRITE
tADSH
tADSS
tADSH
tADSS
tOEHZ
tAAH
tAAS
tWH
tWS
tDH
tDS
(NOTE 3)
(NOTE 1)
(NOTE 4)
GW#
tWH
tWS
(NOTE 5)
Byte write signals are
ignored for first cycle when
ADSP# initiates burst.
ADSC# extends burst.
ADV# suspends burst.
DON’T CARE
UNDEFINED
NOTE:
1. D(A2) refers to input for address A2. D(A2 + 1) refers to input for the next internal burst address following A2.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH.
When CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. OE# must be HIGH before the input data setup and held HIGH throughout the data hold time. This prevents
input/output data contention for the time period prior to the byte write enable inputs being sampled.
4. ADV# must be HIGH to permit a WRITE to the loaded address.
5. Full-width WRITE can be initiated by GW# LOW; or GW# HIGH and BWE#, BWa# and BWb# LOW for x18
device; or GW# HIGH and BWE#, BWa#-BWd# LOW for x32 and x36 devices.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L256V18P1T-5 | 制造商:Cypress Semiconductor 功能描述:256KX18 SRAM PLASTIC TQFP 3.3V |
| MT58L256V18P1T-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L256V32F | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L256V32P | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM |
| MT58L256V32PF-6 | 制造商:Cypress Semiconductor 功能描述:256KX32 SRAM PLASTIC FBGA 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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