- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384755 > MT48LC16M16A2 (Micron Technology, Inc.) SYNCHRONOUS DRAM PDF資料下載
參數(shù)資料
| 型號： | MT48LC16M16A2 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件頁數(shù)： | 20/62頁 |
| 文件大?。?/td> | 1517K |
| 代理商： | MT48LC16M16A2 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁
20
256Mb: x4, x8, x16 SDRAM
256MSDRAM_E.p65
–
Rev. E; Pub. 3/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x4, x8, x16
SDRAM
This is shown in Figure 7 for CAS latencies of two and
three; data element
n
+ 3 is either the last of a burst of
four or the last desired of a longer burst. The 256Mb
SDRAM uses a pipelined architecture and therefore
does not require the 2
n
rule associated with a prefetch
Figure 7
Consecutive READ Bursts
architecture. A READ command can be initiated on any
clock cycle following a previous READ command. Full-
speed random read accesses can be performed to the
same bank, as shown in Figure 8, or each subsequent
READ may be performed to a different bank.
DON
’
T CARE
NOTE:
Each READ command may be to any bank. DQM is LOW.
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL
n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
X = 1 cycle
CAS Latency = 2
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL
n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
NOP
T7
X = 2 cycles
CAS Latency = 3
相關PDF資料 |
PDF描述 |
|---|---|
| MT48LC64M4A2 | SYNCHRONOUS DRAM |
| MT48LC4M32B2 | SYNCHRONOUS DRAM |
| MT48LC4M32LFFC | SYNCHRONOUS DRAM |
| MT48LC64M8A2 | SYNCHRONOUS DRAM |
| MT48LC32M16A2 | SYNCHRONOUS DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|
發(fā)布緊急采購，3分鐘左右您將得到回復。