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參數(shù)資料
| 型號(hào)： | MRFE6P3300HR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 423K |
| 代理商： | MRFE6P3300HR5 |
MRFE6P3300HR3 MRFE6P3300HR5
5
RF Device Data
Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
10
20
900
820
IRL
Gps
ACP U
f, FREQUENCY (MHz)
Figure 3. Single-Carrier OFDM Broadband Performance
@ 60 Watts Avg.
890
880
870
860
850
840
830
21
20
65
31
27
50
55
60
η
D
,DRAIN
EFFICIENCY
(%)
ηD
18.5
18
17.5
17
20.5
19.5
19
29
25
45
5
15
VDD = 32 Vdc, Pout = 60 W (Avg.)
IDQ = 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc)
20
5
15
900
820
IRL
Gps
ACP U
f, FREQUENCY (MHz)
Figure 4. Single-Carrier OFDM Broadband Performance
@ 120 Watts Avg.
890
880
870
860
850
840
830
20.5
19
60
44
40
45
50
55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
17.5
17
16.5
19.5
18.5
18
42
38
40
0
10
Figure 5. Two-Tone Power Gain versus
Output Power
21
1
IDQ = 2400 mA
2000 mA
Pout, OUTPUT POWER (WATTS) PEP
20
19
100
600
G
ps
,POWER
GAIN
(dB)
18
1600 mA
10
1200 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
20
30
40
50
60
10
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
10
IDQ = 800 mA
2400 mA
1200 mA
1600 mA
VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
Two Tone Measurements, 6 MHz Tone Spacing
600
1
ACP L
0
ACP L
20
VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
Two Tone Measurements, 6 MHz Tone Spacing
2000 mA
VDD = 32 Vdc, Pout = 120 W (Avg.)
IDQ = 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
16
17
800 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MRFE6P9220HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6P9220HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S8046GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S8046NR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9045GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 45W TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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