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參數(shù)資料
| 型號： | MRF9200LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 469K |
| 代理商： | MRF9200LR3 |
6
RF Device Data
Freescale Semiconductor
MRF9200LR3 MRF9200LSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
80
20
1
100
50
60
10
40
30
70
7th Order
VDD = 26 Vdc, IDQ = 1800 mA
f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
60
10
0.1
7th Order
TWOTONE SPACING (MHz)
VDD = 26 Vdc, Pout = 200 W (PEP), IDQ = 1800 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
5th Order
3rd Order
20
30
40
50
1
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
Figure 9. Pulse CW Output Power versus
Input Power
41
60
33
P3dB = 54.25 dBm (266 W)
Pin, INPUT POWER (dBm)
VDD = 26 Vdc, IDQ = 1800 mA
Pulsed CW, 8
μsec(on), 1 msec(off)
f = 880 MHz
58
54
52
50
48
35
39
37
Actual
Ideal
P1dB = 53.1 dBm (204.1 W)
56
31
P
out
,OUTPUT
POWER
(dBm)
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
0
100
Pout, OUTPUT POWER (WATTS) AVG.
50
0
40
20
30
20
40
10
80
1
10
100
60
VDD = 26 Vdc, IDQ = 1800 mA, f = 880 MHz
NCDMA IS95 Pilot, Sync, Paging, Traffic Codes 8 Through 13
ηD
Gps
ACPR
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
AL
T1,
CHANNEL
POWER
(dBc)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
ALT1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9200LR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9200LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9210 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF9210R3 | 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9210R5 | 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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