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參數(shù)資料
| 型號： | MRF9200LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 469K |
| 代理商： | MRF9200LR3 |
MRF9200LR3 MRF9200LSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
840
IRL
Gps
ACPR
ALT1
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 40 Watts Avg.
16
8
10
12
14
VDD = 26 Vdc, Pout = 40 W (Avg.), IDQ = 1800 mA
NCDMA IS95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
17
19
18.8
18.6
70
26
24
22
20
45
50
55
60
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
18.4
18.2
18
17.8
17.6
17.4
17.2
850
860
870
880
890
900
910
920
18
65
18
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
840
IRL
Gps
ACPR
ALT1
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 85 Watts Avg.
18
10
12
14
16
VDD = 26 Vdc, Pout = 85 W (Avg.), IDQ = 1800 mA
NCDMA IS95 Pilot, Sync, Paging, Traffic Codes 8 Through 13
16
18
17.8
17.6
65
38
36
34
32
40
45
50
55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
17.4
17.2
17
16.8
16.6
16.4
16.2
850
860
870
880
890
900
910
920
35
60
20
Figure 5. Two-Tone Power Gain versus
Output Power
100
15.5
19
1
IDQ = 3000 mA
2400 mA
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
100 kHz Tone Spacing
18
17
16
10
Pout, OUTPUT POWER (WATTS) PEP
G
ps
,POWER
GAIN
(dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
55
25
1
IDQ = 1200 mA
3000 mA
10
30
35
40
45
50
100
60
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements, 100 kHz Tone Spacing
Pout, OUTPUT POWER (WATTS) PEP
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
18.5
17.5
16.5
1800 mA
1200 mA
2400 mA
1800 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9200LR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9200LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9210 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
| MRF9210R3 | 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9210R5 | 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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