參數(shù)資料
型號: MRF8S9260HR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN
文件頁數(shù): 11/14頁
文件大小: 304K
代理商: MRF8S9260HR3
6
RF Device Data
Freescale Semiconductor
MRF8S9260HR3 MRF8S9260HSR3
TYPICAL CHARACTERISTICS
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single-Carrier W-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-25
14
20
0
60
50
40
30
20
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
10
100
300
10
-50
ACPR
(dBc)
19
18
-20
-30
Figure 6. Broadband Frequency Response
0
24
600
f, FREQUENCY (MHz)
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1700 mA
12
8
700
GAIN
(dB)
20
800
900
1000
1100
1200
IRL
-18
0
-3
-6
-9
-12
IRL
(dB)
-15
17
16
15
-45
-40
-35
920 MHz
960 MHz
920 MHz
4
16
Gps
940 MHz
960 MHz
VDD = 28 Vdc, IDQ = 1700 mA
Single-Carrier W-CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
Probability on CCDF
960 MHz
940 MHz
920 MHz
940 MHz
ηD
Gain
W-CDMA TEST SIGNAL
0.0001
100
0
PEAK-T O-A VERAGE (dB)
Figure 7. CCDF W-CDMA IQ Magnitude
Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
6
8
PROBABILITY
(%)
W-CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-60
-100
10
(dB)
-20
-30
-40
-50
-70
-80
-90
3.84 MHz
Channel BW
7.2
1.8
5.4
3.6
0
-1.8
-3.6
-5.4
-9
9
f, FREQUENCY (MHz)
Figure 8. Single-Carrier W-CDMA Spectrum
-7.2
-ACPR in 3.84 MHz
Integrated BW
+ACPR in 3.84 MHz
Integrated BW
-10
0
13
57
9
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