參數(shù)資料
型號: MRF8S9220HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁數(shù): 10/14頁
文件大?。?/td> 347K
代理商: MRF8S9220HSR3
MRF8S9220HR3 MRF8S9220HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL,
INPUT
RETURN
LOSS
(dB)
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 65 Watts Avg.
5
15
16
20
39
42
40
38
31
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
19.6
19.2
18.4
840
860
880
900
920
940
960
980
32
25
PARC
P
ARC
(dB)
3.5
1.5
4
ACPR
(dBc)
Figure 3. Intermodulation Distortion Products
versus Two-Tone Spacing
TWOTONE SPACING (MHz)
10
60
0
20
30
50
1
100
IMD,
INTERMODULA
TION
DIST
O
R
T
ION
(dBc)
40
IM3U
IM3L
IM5U
IM5L
IM7L
IM7U
VDD = 28 Vdc, Pout = 200 W (PEP), IDQ = 1600 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
Figure 4. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
5
0
2
4
OUTPUT
COMPRESSION
A
T
0.01%
PROBABILITY
ON
CCDF
(dB)
30
50
130
0
60
50
40
30
20
10
η
D,
DRAIN
EFFICIENCY
(%)
1 dB = 59.8 W
ηD
ACPR
(dBc)
55
25
30
35
45
40
50
20.5
G
ps
,POWER
GAIN
(dB)
20
19
18
VDD = 28 Vdc, IDQ = 1600 mA, f = 940 MHz
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
2 dB = 81.0 W
3 dB = 110.1 W
0
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
70
90
ACPR
10
110
Gps
PARC
16.4
16.8
17.2
17.6
18
18.8
36
34
33
35
37
10
20
3
2.5
2
VDD = 28 Vdc, Pout = 65 W (Avg.)
IDQ = 1600 mA, SingleCarrier
WCDMA
19.5
18.5
17.5
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