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參數(shù)資料
| 型號： | MRF8S21140HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 214K |
| 代理商： | MRF8S21140HR3 |
2
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1.0
1.8
2.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 970 mAdc)
VGS(Q)
—
2.6
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 970 mAdc, Measured in Functional Test)
VGG(Q)
3.8
5.2
6.8
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.1
0.18
0.3
Vdc
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 970 mA, Pout = 34 W Avg., f = 2140 MHz,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5 MHz Offset.
Power Gain
Gps
16.7
17.9
19.7
dB
Drain Efficiency
ηD
29.7
31.7
—
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
5.9
6.4
—
dB
Adjacent Channel Power Ratio
ACPR
—
-37.5
-36
dBc
Input Return Loss
IRL
—
-16
-7
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 970 mA, Pout = 34 W Avg.,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5 MHz Offset.
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
17.7
32.1
6.2
-37.0
-17
2140 MHz
17.9
31.7
6.4
-37.5
-16
2170 MHz
18.1
31.7
6.4
-37.5
-16
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
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|---|---|
| MRF8S21140HR5 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2GHZ 140W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21140HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21172HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 42W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21172HR3_12 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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