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參數(shù)資料
| 型號： | MRF8S21140HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 214K |
| 代理商： | MRF8S21140HR3 |
MRF8S21140HR3 MRF8S21140HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
17.7
32.1
6.2
-37.0
2140 MHz
17.9
31.7
6.4
-37.5
2170 MHz
18.1
31.7
6.4
-37.5
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 188 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point ] 126 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW Operation @ TC = 25°C
Derate above 25
°C
CW
168
0.86
W
W/
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75
°C, 34 W CW, 28 Vdc, IDQ = 970 mA, 2140 MHz
Case Temperature 80
°C, 150 W CW(1), 28 Vdc, IDQ = 970 mA, 2140 MHz
RθJC
0.47
0.42
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF8S21140H
Rev. 0, 5/2010
Freescale Semiconductor
Technical Data
2110-2170 MHz, 34 W AVG., 28 V
W-CDMA, LTE
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF8S21140HR3
MRF8S21140HSR3
CASE 465A-06, STYLE 1
NI-780S
MRF8S21140HSR3
CASE 465-06, STYLE 1
NI-780
MRF8S21140HR3
Freescale Semiconductor, Inc., 2010. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8S21140HR5 | 功能描述:射頻MOSFET電源晶體管 RF FET HV8 2GHZ 140W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21140HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21172HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 42W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21172HR3_12 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
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