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參數(shù)資料
| 型號： | MRF8S21100HR5 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 442K |
| 代理商： | MRF8S21100HR5 |
2
RF Device Data
Freescale Semiconductor
MRF8S21100HR3 MRF8S21100HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 150 μAdc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDS =28 Vdc, ID = 700 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD =28 Vdc, ID = 700 mAdc, Measured in Functional Test)
VGG(Q)
4.0
5.4
7.0
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =1.5 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 700 mA, Pout = 24 W Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
17.2
18.3
20.2
dB
Drain Efficiency
ηD
31.0
33.4
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.9
6.3
—
dB
Adjacent Channel Power Ratio
ACPR
—
--37.2
--36.0
dBc
Input Return Loss
IRL
—
--12
--7
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 700 mA, Pout =24 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
17.9
33.0
6.4
--38.7
--18
2140 MHz
18.1
33.0
6.4
--38.2
--16
2170 MHz
18.3
33.4
6.3
--37.2
--12
1. VGG =2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
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| MRF8S21100HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 100W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21100HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 100W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21120HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21120HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S21120HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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