參數(shù)資料
型號(hào)： MRF8S18120HR3
廠(chǎng)商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件頁(yè)數(shù)： 7/14頁(yè)
文件大?。?/td> 409K
代理商： MRF8S18120HR3
2
RF Device Data
Freescale Semiconductor
MRF8S18120HR3 MRF8S18120HSR3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 79°C, 72 W CW, 28 Vdc, IDQ = 800 mA
Case Temperature 79°C, 120 W CW, 28 Vdc, IDQ = 800 mA
RθJC
0.47
0.46
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 260 μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, ID = 800 mAdc, Measured in Functional Test)
VGS(Q)
1.8
2.6
3.3
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =2.3 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 800 mA, Pout = 72 W CW, f = 1805 MHz
Power Gain
Gps
17
18.2
20
dB
Drain Efficiency
ηD
48
49.8
—
%
Input Return Loss
IRL
—
--11
--8
dB
Pout @ 1 dB Compression Point, CW
P1dB
112
—
W
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 800 mA, Pout =72 W CW
Frequency
Gps
(dB)
ηD
(%)
IRL
(dB)
1805 MHz
18.2
49.8
--11
1840 MHz
18.6
51.4
--15
1880 MHz
18.7
53.9
--12
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched both on input and output.
(continued)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF8S18120HR3_10 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S18120HR5 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S18120HSR3 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S18120HSR5 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S18210WGHSR3 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 210W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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