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參數(shù)資料
| 型號： | MRF8S18120HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 10/14頁 |
| 文件大小： | 409K |
| 代理商： | MRF8S18120HR3 |
MRF8S18120HR3 MRF8S18120HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1780
1800
1820
1840
1860
1880
1920
1760
1900
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
G
ps
,P
OWER
GAIN
(d
B)
IR
L,
IN
PU
T
RETU
RN
LO
SS
(d
B)
f, FREQUENCY (MHz)
15
30
Gps
21
60
20
55
19
50
45
35
IRL
Figure 2. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 72 Watts CW
--5
--20
17
40
--10
--15
ηD
VDD =28 Vdc,Pout =72 W CW,IDQ = 800 mA
18
16
1780
1800
1820
1840
1860
1880
1920
1760
1900
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout = 46 Watts Avg.
21
1
50
IRL
20
45
40
18
35
3
16
2
G
ps
,P
OWER
GAIN
(d
B)
EVM,
ER
RO
R
VEC
TO
R
M
AG
NIT
UDE
(%
rm
s)
VDD =28 Vdc,Pout =46 W Avg.
IDQ = 800 mA, EDGE Modulation
19
17
15
ηD
IR
L,
IN
PU
T
RETU
RN
LO
SS
(d
B)
--5
--20
--10
--15
EVM
100
--60
110
--20
--30
--40
--50
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
IM
D,
INT
ERM
O
DULA
TIO
N
DIST
O
RT
ION
(dBc
)
IM7--U
IM5--U
IM5--L
IM3--L
IM7--L
IM3--U
VDD =28 Vdc,Pout = 94 W (PEP)
IDQ = 800 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
--10
Pout, OUTPUT POWER (WATTS) CW
10
19
f = 1880 MHz
VDD =28 Vdc
IDQ = 800 mA
18
16
15
1
100
Figure 5. Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
17
1840 MHz
1805 MHz
Gps
ηD
Gps
1880 MHz
1840 MHz
14
300
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
0
75
60
45
30
15
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8S18120HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S18120HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S18120HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S18120HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S18210WGHSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 210W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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