參數(shù)資料
型號: MRF8P9040NR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝: ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
文件頁數(shù): 17/23頁
文件大?。?/td> 822K
代理商: MRF8P9040NR1
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (1,2,3) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 320 mA, Pout = 4.0 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
17.5
19.1
20.5
dB
Drain Efficiency
ηD
18.0
19.9
%
Adjacent Channel Power Ratio
ACPR
--48.8
--46.0
dBc
Input Return Loss
IRL
--13
--9
dB
Typical Broadband Performance (1) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 320 mA, Pout = 4.0 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
IRL
(dB)
920 MHz
18.9
--49.6
--12
940 MHz
19.1
19.5
--50.1
--13
960 MHz
19.1
19.9
--48.8
--13
Typical Performances (1) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 320 mA, 920--960 MHz Bandwidth
Characteristic
Symbol
Min
Typ
Max
Unit
Pout @ 1 dB Compression Point, CW
P1dB
42
W
IMD Symmetry @ 45 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
22
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
70
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout =4.0 W Avg.
GF
0.2
dB
Gain Variation over Temperature
(--30°Cto+85°C)
G
0.016
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
P1dB
0.001
dB/°C
Typical Broadband Performance — 700 MHz (1) (In Freescale 700 MHz Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 320 mA,
Pout = 4.0 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
ACPR
(dBc)
IRL
(dB)
728 MHz
19.9
18.7
--49.9
--14
748 MHz
20.1
19.1
--50.0
--15
768 MHz
20.0
19.5
--49.9
--12
1. Measurement made with device in single--ended configuration. (See Figure 3, Possible Circuit Topologies)
2. Part internally input matched.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
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