參數(shù)資料
型號: MRF8P9040NR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝: ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
文件頁數(shù): 12/23頁
文件大?。?/td> 822K
代理商: MRF8P9040NR1
2
RF Device Data
Freescale Semiconductor
MRF8P9040NR1 MRF8P9040GNR1 MRF8P9040NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case (4)
Case Temperature 77°C, 4.0 W CW, 28 Vdc, IDQ = 320 mA, 960 MHz
Case Temperature 81°C, 40 W CW, 28 Vdc, IDQ = 320 mA, 960 MHz
RθJC
1.5
1.3
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =70 Vdc, VGS =0 Vdc)
IDSS
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
1
μAdc
On Characteristics (4)
Gate Threshold Voltage
(VDS =10 Vdc, ID = 170 μAdc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, ID = 320 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =0.55 Adc)
VDS(on)
0.1
0.17
0.3
Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Measurement made with device in single--ended configuration. (See Figure 3, Possible Circuit Topologies)
(continued)
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